Semiconductor device and process for producing the same
US6380561B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1999 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | Apr 13, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a semiconductor device having a large aperture ratio, in which an auxiliary capacitance of a large capacity is provided in each pixel.Capacitance wiring 102 comprising a tantalum film is formed on a substrate 101 having an insulating surface, and a tantalum oxide film 103 is formed by heat oxidation thereof. An active layer 104 comprising a semiconductor thin film is formed, and an auxiliary capacitance comprising the structure obtained by sandwiching the tantalum oxide film 103 with a part of the active layer 104 and the capacitance wiring 102 is formed. The active layer 104 functions as an active layer of a top-gate TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.