Multilayer semiconductor structure with phosphide-passivated germanium substrate

US6380601B1 · kind B1 · utility

Assignee

• HUGHES ELECTRONICS LIMITED · US

Inventors

• James H. Ermer · Burbank, US
• Li Cai · Singapore, SG
• Moran Haddad · Calabasas, US
• Bruce T. Cavicchi · Burbank, US
• Nasser H. Karam · Tustin, US

Key dates

• Filing date: Mar 29, 1999
• Grant date: Apr 30, 2002
• Expiry date: Mar 29, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type germanium region adjacent to the first surface. A layer of a phosphide material overlies and contacts the first surface of the germanium substrate. A layer of gallium arsenide overlies and contacts the layer of the phosphide material, and electrical contacts may be added to form a solar cell. Additional photovoltaic junctions may be added to form multijunction solar cells. The solar cells may be assembled together to form solar panels.