Plasma generating apparatus and semiconductor manufacturing method
US6380684B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | May 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma generating apparatus and processing method, which generate high-density plasma, even in the central portion of the plasma generating zone. The apparatus comprises rectangular electrodes, a rectangular fistulous discharge electrode which surrounds the plasma generating zone, and a vacuum chamber of rectangular cross-section. Permanent magnets surround the discharge electrode, produce predetermined magnetic lines of force with portions which extend approximately parallel to the central axis of discharge electrode. A pair of parallel plate electrodes define the extension of the plasma generating zone in the direction of the central axis of the discharge electrode. The apparatus is configured such that the magnetic lines of force passing through the central portion of the plasma generating zone do not intersect with the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.