Magnetic element, magnetic read head, magnetic storage device, magnetic memory device
US6381171B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2000 |
| Grant date | Apr 30, 2002 |
| Priority date | — |
| Expiry date | May 17, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a spin-dependent tunneling effect element expectable to offer the spin accumulation effect at room temperature while also providing a data storage or “memory” element and magnetic reading head each using the tunnel effect element A first concept of the present invention lies in provision of a magnetic element characterized by comprising first and second ferromagnetic layers 1, 5 and a layer of semiconductor particles 3 neighboring the first ferromagnetic layer 1 with a first tunnel barrier 2 disposed between them and also neighboring the second ferromagnetic layer 5 with a second tunnel barrier 4 laid therebetween. A magnetic memory device is also provided which comprises a plurality of memory cells each including a spin-dependent tunneling effect element having a first ferromagnetic electrode, a second ferromagnetic electrode, and a gate electrode as inserted between the first and second ferromagnetic electrodes through first and second ferromagnetic layers; data lines connected in common to the first or second ferromagnetic electrode of multiple spin-dependent tunneling effect elements; and a plurality of word lines capacitance-coupled t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.