Semiconductor device having a metal gate with a work function compatible with a semiconductor device
US6383879B1 · kind B1 · utility
70Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | May 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.