Method for manufacturing photoelectric conversion device
US6383898B1 · kind B1 · utility
33Cited by
6References
22Claims
0Family size
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Inventor
Key dates
| Filing date | May 25, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | May 25, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photoelectric conversion device including a plurality of pin junction layers, wherein at least a p-layer adjacent to an n-layer is formed of a stack of an amorphous silicon layer as a first p-layer and an amorphous silicon layer as a second p-layer, the first p-layer having a thickness of 5 nm or less and containing a p-type impurity and an n-type impurity, and the second p-layer having a p-type impurity concentration gradually decreasing as it is closer to an i-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.