Process for fabricating a semiconductor device
US6383907B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Sep 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a semiconductor device comprising an interlayer dielectric containing an organic film, which process comprises the step of forming on the interlayer dielectric a three-layer mask comprising a first mask, a second mask and a third mask in this order from the bottom, in which the first mask, the second mask and the third mask are made of materials different from one another, and the second mask is formed from a film made of a material which protects a film for forming the first mask during formation of the third mask. The process of the present invention is advantageous not only in that the second mask serves as a protecting film for the layers under the first mask during formation of the third mask, so that etching using a resist mask can be conducted during formation of the third mask, and further it becomes possible to perform a regeneration treatment for the resist mask while preventing the layers under the first mask from suffering a damage, but also in that, as a material for the first mask, the same material as that for the resist mask, for example, a carbon-containing material having a low dielectric constant can be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.