Post copper CMP clean
US6383928B1 · kind B1 · utility
63Cited by
1References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-contact post CMP clean-up process. A corrosion inhibitor is used to protect the copper (118) surface to prevent an electrochemical reaction between the p-well and n-well areas. A multi-step wet chemistry is used to clean all exposed surfaces without etching more than 100 å of the dielectric (110), copper (118), or liner (116). The first step uses a basic solution and a surfactant (124). The second step uses a diluted HF solution (126) and the third step uses an organic acid solution (128).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.