Dry etching method
US6383942B1 · kind B1 · utility
16Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Mar 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dry etching method is disclosed for use in patterning a stacked film of a metal film containing aluminum as the base component and a thin film including at least one of titanium and titanium nitride. In this method, the thin film is dry-etched using a first etching gas (a mixture of CF4 gas, Ar gas and Cl gas) having a gas composition for preventing the metal film from being processed. The metal film is then dry-etched using a second etching gas (a mixture of Cl gas and BCl3 gas) having a gas composition other than the first etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.