Apparatus for fabricating semiconductor device and method for fabricating semiconductor using the same
US6383953B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 13, 2001 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Mar 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for fabricating a semiconductor device includes: a plasma torch having a hollow convey tube of which one end portion is made of a conductor so as to serve as an inner electrode, for injecting plasma generating gas through one end portion, conveying and spraying a plasma frame through the other end portion; an energy applying unit for applying a microwave to the gas conveyed through the convey tube and adds an energy thereto; an outer electrode for surrounding the other end portion of the convey tube and its extended portion coaxially; an insulation tube positioned between the convey tube and the outer electrode for electrically insulating the other end portion of the convey tube and the outer electrode and surrounding partially the convey tube coaxially; a power source for applying a voltage to the inner electrode and the outer electrode; a suscepter installed facing the plasma frame sprayed from the plasma torch; a suscepter moving unit for moving the suscepter in the vertical and horizontal directions to the other end portion of the convey tube; and a reactive chamber for surrounding the other end portion of the convey tube and the suscepter and defining a reactive s…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.