Silicone polymer insulation film on semiconductor substrate and method for forming the film
US6383955B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Jun 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicone polymer insulation film having a low dielectric constant, high thermal stability, high humidity-resistance, and high O2 plasma resistance on a semiconductor substrate is applied to a plasma CVD apparatus. The first step is introducing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&agr;−1(R)2&agr;−&bgr;+2(OCnH2n+1)&bgr; (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the material gas is lengthened by, for example, reducing the total flow of the reaction gas, in such a way as to form a silicone polymer film having a micropore porous structure with a low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.