Calibration of a scanning electron microscope
US6384408B1 · kind B1 · utility
22Cited by
4References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1999 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Aug 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30433
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A scanning electron microscope (SEM) is calibrated for the effects of local charging on a measured critical dimension (CD) of a wafer by first calibrating the microscope with respect to a calibration wafer with a known CD. Local charging on a wafer may be measured as a local landing energy (LLE) so that a scale factor based on a ratio of LLEs for the measurement wafer and a calibration wafer is used to correct a measured CD for the measurement wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.