Method of evaluating quality of silicon wafer and method of reclaiming the water
US6384415B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 20, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/3568
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of evaluating the quality of a silicon wafer is characterized by analyzing a silicon wafer by an infrared absorption spectrum, and then evaluating the quality of the silicon crystal based on an absorbance ratio represented by the following formula (1):{(Absorbance &agr;1 at an arbitrary wavenumber between 1055 and 1080 cm−1)−(Absorbance &agr;BL of base line)}/{(Absorbance &agr;2 at an arbitrary wavenumber between 1100 and 1120 cm−1)−(Absorbance &agr;BL of base line)}  (1)wherein absorbances &agr;1 and &agr;2 represent absorbances of the measured silicon wafer, and base line absorbance &agr;BL represents the absorbance of a base line of the measured silicon wafer, which is drawn from 1030 to 1170 cm−1. By using the quality evaluating method of the present invention, internal crystal defects of silicon can be precisely detected in a non-destructive manner. The method of the present invention thus has the advantages of improving productivity, decreasing reclaiming cost, etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.