Silicon carbide semiconductor switching device
US6384428B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Sep 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
The present semiconductor switching device comprises a silicon carbide single crystal of hexagonal symmetry having a first conductive type and a semiconductor region of a second conductive type opposite to the first conductive type and locating in the silicon carbide single crystal. The silicon carbide single crystal of the first conductive type and the semiconductor region of the seconductive type form a pn junction. The pn junction interface has an interface extended in the depth direction from the surface of the silicon carbide single crystal, and the interface includes a crystal plane in parallel to the <1120> orientation of the silicon carbide single crystal or approximately in parallel thereto, thereby reducing the leak current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.