Electrostatic discharge protection device with monolithically formed resistor-capacitor portion
US6384452B1 · kind B1 · utility
12Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Jul 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a silicon-on-insulator (SOI) substrate including a base substrate, an insulator layer, and a silicon layer, a trench capacitor including at least one trench formed in the silicon-on-insulator substrate and extending through the silicon layer and the insulator layer to the base substrate, and a resistive element formed in the silicon-on-insulator substrate. The capacitor and resistor structure provide an R-C circuit which may be used in triggering an electrostatic discharge (ESD) protection device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.