Dual dielectric structure for suppressing lateral leakage current in high fill factor arrays

US6384461B1 · kind B1 · utility

Assignee

• Xerox Corporation · US

Inventors

• Jeng Ping Lu · San Jose, US
• Ping Mei · Palo Alto, US
• Francesco Lemmi · Roma, IT
• Robert A. Street · Palo Alto, US
• James B. Boyce · Los Altos, US

Key dates

• Filing date: Oct 15, 1999
• Grant date: May 7, 2002
• Expiry date: Oct 15, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A structure and method for suppressing lateral leakage current in full fill factor image arrays includes dual dielectric passivation layer. A first passivation layer includes a material that is an insulator, has a low dielectric constant to minimize capacitive coupling between the contacts, and is low stress to prevent cracking. A second passivation layer includes a thin oxide or nitride layer over the first passivation layer.