Planar hetero-interface photodetector
US6384462B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2000 |
| Grant date | May 7, 2002 |
| Priority date | — |
| Expiry date | Dec 6, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A planar avalanche photodetector (APD) is fabricated by forming a, for example, InGaAs absorption layer on a p+-type semiconductor substrate, such as InP, and wafer-bonding to the absorption layer a second p-type semiconductor, such as Si, to form a multiplication layer. The layer thickness of the multiplication layer is substantially identical to that of the absorption layer. A region in a top surface of the p-type Si multiplication layer is doped n+-type to form a carrier separation region and a high electric field in the multiplication region. The APD can further include a guard-ring to reduce leakage currents as well as a resonant mirror structure to provide to wavelength selectivity. The planar geometry furthermore favors the integration of high-speed electronic circuits on the same substrate to fabricate monolithic optoelectronic transceivers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.