Apparatus and method for processing substrate
US6387182B1 · kind B1 · utility
79Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4557
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.