Method for cleaning semiconductor wafer after chemical mechanical polishing on copper wiring
US6387190B1 · kind B1 · utility
21Cited by
9References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 17, 1999 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | May 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.