Method of forming resist images by periodic pattern removal
US6387596B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method of forming nested and isolated images in a photosensitive resist. In the disclosed method, the entire surface of the photosensitive resist or selected regions thereof is exposed to a first mask having a set of nested, i.e. repeating pattern or grid images thereon, and then exposed to a second mask in order to remove unwanted portions of the nested image, so as to provide regions of nested and regions of isolated images in said photosensitive resist. The method may also be used to form regions having images in proximity to one another and regions having isolated images by exposing the entire surface of the photosensitive resist to a first mask having repeating patterns, and then removing entire or portions of the repeating patterns by exposure of the photosensitive resist with a second mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.