Semiconductor package, semiconductor device, electronic device and production method for semiconductor package
US6387734B1 · kind B1 · utility
51Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2001 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating layer (3) is formed on a Si wafer (1). An opening portion is made in this insulating layer (3), and subsequently a rerouting layer (2) is formed. Next, a resin layer (4) is formed on the rerouting layer (2). The resin layer (4) is then cured so that the rerouting layer (2) and a Cu foil (5) are bonded to each other through the resin layer (4). Thereafter, a ring-like opening portion (4a) is made in the resin layer (4), and a Cu plating layer (8) is formed inside this opening portion (4a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.