Method of manufacturing a capacitor in a semiconductor device
US6387749B1 · kind B1 · utility
13Cited by
13References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 25, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jul 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates generally to a method of manufacturing a semiconductor device. There is disclosed a method of manufacturing a semiconductor device capable of obtaining a higher static capacity and a lower leak current characteristic. According to the present invention, the method includes forming a lower electrode and forming a tantalum oxide film. In particular, it performs a plasma process during the process of forming the tantalum oxide film, and in the last step of forming the tantalum oxide firm it controls the amount of source fluid to form a tantalum oxy-nitride film, thus forming an upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.