Methods of T-gate fabrication using a hybrid resist

US6387783B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Mark C. Hakey · Saint Albans, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Paul A. Rabidoux · Winooski, US

Key dates

• Filing date: Apr 26, 1999
• Grant date: May 14, 2002
• Expiry date: Apr 26, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28581
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for forming a T-gate on a substrate are provided that employ a hybrid resist. The hybrid resist specifically is employed to define a base of the T-gate on the substrate with very high resolution. To define a base of the T-gate, a hybrid resist layer is deposited on the substrate. A mask having a reticle feature with an edge is provided and is positioned above the hybrid resist layer so that the edge of the reticle feature is above a desired location for the base of the T-gate. Thereafter, the hybrid resist layer is exposed to radiation through the mask, and the exposed hybrid resist layer is developed to define an opening therein for the base of the T-gate. Preferably the loop feature formed in the hybrid resist layer by the reticle feature during exposure is trimmed. The T-gate may be completed by employing any known T-gate fabrication techniques.