Conversion of amorphous layer produced during IMP Ti deposition
US6387790B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a Ti-containing liner having good contact resistance and coverage of a contact hole is provided. The method which converts an amorphous region of ionized metal plasma deposited Ti into a substantially crystalline region includes (a) providing a structure having at least one contact hole formed therein, said at least one contact hole exposing at least a portion of a cobalt disilicide contact formed in a semiconductor substrate; (b) depositing a Ti/TiN liner in said at least one contact hole by ionized metal plasma deposition; (c) annealing said Ti/TiN liner under conditions effective to recrystallize any amorphous region formed during said annealing into a crystalline region including a TiSi2 top layer and a CoSix bottom layer; and (d) optionally forming a conductive material on said Ti/TiN liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.