Separation process for silicon-on-insulator wafer fabrication
US6387829B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2000 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Apr 6, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing a silicon-on-insulator wafer from a silicon wafer assembly. The assembly is made of two wafers. One of the wafers contains a fragile layer. The fragile layer is a layer containing a high amount of hydrogen. An amount of energy from an energy source is applied to the assembly to separate the assembly along the fragile layer thus forming a silicon-on-insulator wafer and a leftover wafer. The energy source is selected from the group consisting of: ultrasound, infrared, hydrostatic pressure, hydrodynamic pressure, or mechanical energy. The amount of energy is chosen to be sufficient to transform the fragile layer into a quasi-continuous gaseous layer. Under separation the hydrogen-enriched layer transforms into layer consisting of hydrogen platelets and hydrogen microbubbles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.