Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
US6388279B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1998 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jun 10, 2018 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/019
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In the method for manufacturing a semiconductor substrate, a concavity and a connecting hole for connecting the concavity to the outside are formed on a lower face side of a first substrate, and the first substrate is laminated with a second substrate in an atmosphere at atmospheric pressure. A diaphragm is formed by thinning the first substrate from its upper face by polishing. A sealing hole reaching to the connecting hole is formed from the upper face of the first substrate. An oxide film is formed in the sealing hole in a vacuum, whereby the connecting hole is sealed while the pressure of the pressure reference chamber is reduced to a vacuum. In this way, since the pressure reference chamber is pressure-reduced in a final stage, the diaphragm can be prevented from deforming due to pressure difference during polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.