Parallel-planar plasma processing apparatus
US6388624B1 · kind B1 · utility
4Cited by
4References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 2, 2001 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q1/26
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
In a method of generating plasma by using a high frequency in VHF or UHF band and a magnetic field, a plasma processing apparatus has an antenna and an emitting port which are adapted to supply the high frequency in UHF or VHF band to a processing chamber and a magnetic field forming unit for forming a magnetic field in the processing chamber, wherein the ratio between the radius of the antenna and the effective length of the emitting port is 0.4 or more and 1.5 or less, whereby plasma of high density and high uniformity can be generated in a wide parameter region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.