Structure and method for asymmetric waveguide nitride laser diode
US6389051B1 · kind B1 · utility
25Cited by
3References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 1999 |
| Grant date | May 14, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3054
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.