Micromechanical sensor and method for its production
US6389902B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Feb 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R31/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.