Method of manufacturing a semiconductor device utilizing a(Al2O3)X-(TiO2)1-X gate dielectric film
US6391727B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 28, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Nov 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of manufacturing a semiconductor device utilizing a gate dielectric film. The present invention can obtain a (Al2O3)X—(TiO2)1−X gate dielectric film where its the dielectric constant is higher than that of Al2O3 and its leakage current characteristic is improved compared to TiO2, by depositing a Ti1−XAlXN film on a semiconductor substrate and then forming the (Al2O3)X—(TiO2)1−X gate dielectric film by oxidization process. Therefore, the present invention can implement a high-speed high-density logic device and an ultra high integration device of more than 1G DRAM class, which utilize a high dielectric material as the gate dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.