Inventor · Seojong-myeon, KR

Dae-Gyu Park

92Patents
16h-index
126Co-inventors
87Inventor score

Filing activity: Aug 25, 1997 → Jun 2, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8043920B2 finFETS and methods of making same Electricity 82 Active
US6664160B2 Gate structure with high K dielectric Electricity 59 Expired
US6506676B2 Method of manufacturing semiconductor devices with titanium aluminum nitride work function Electricity 56 Expired
US7279413B2 High-temperature stable gate structure with metallic electrode Electricity 46 Expired
US6579767B2 Method for forming aluminum oxide as a gate dielectric Electricity 30 Expired
US7084024B2 Gate electrode forming methods using conductive hard mask Electricity 28 Expired
US8586441B1 Germanium lateral bipolar junction transistor Electricity 27 Active
US7872303B2 FinFET with longitudinal stress in a channel Electricity 26 Active
US8557670B1 SOI lateral bipolar junction transistor having a wide band gap emitter contact Electricity 21 Active
US7989298B1 Transistor having V-shaped embedded stressor Electricity 20 Active
US7439128B2 Method of creating deep trench capacitor using a P+ metal electrode Electricity 20 Active
US7863126B2 Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region Electricity 20 Active
US7867839B2 Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistors Electricity 19 Active
US9059016B1 Lateral heterojunction bipolar transistors Electricity 19 Active
US7504700B2 Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method Electricity 18 Expired
US7023064B2 Temperature stable metal nitride gate electrode Emerging Cross-Sectional Technologies 17 Expired
US6391727B1 Method of manufacturing a semiconductor device utilizing a(Al2O3)X-(TiO2)1-X gate dielectric film Electricity 15 Expired
US6524918B2 Method for manufacturing a gate structure incorporating therein aluminum oxide as a gate dielectric Electricity 14 Expired
US8558282B1 Germanium lateral bipolar junction transistor Electricity 14 Active
US9034748B2 Process variability tolerant hard mask for replacement metal gate finFET devices Emerging Cross-Sectional Technologies 12 Active
US6642132B2 Cmos of semiconductor device and method for manufacturing the same Electricity 11 Expired
US6768179B2 CMOS of semiconductor device and method for manufacturing the same Electricity 10 Expired
US6909137B2 Method of creating deep trench capacitor using a P+ metal electrode Electricity 9 Expired
US7157359B2 Method of forming a metal gate in a semiconductor device using atomic layer deposition process Electricity 9 Expired
US6828185B2 CMOS of semiconductor device and method for manufacturing the same Electricity 9 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.