Method for fabricating a capacitor of a semiconductor device and a capacitor made thereby
US6391736B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Nov 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for fabricating a capacitor of a semiconductor device, and a capacitor made in accordance with the method are disclosed. The method includes forming a plate electrode polysilicon layer on a semiconductor substrate having a cell array region and a core/peripheral circuit region. The plate electrode polysilicon layer in the cell array region is patterned to form an opening, wherein the inner wall of the opening is used as a plate electrode. After forming a dielectric layer in the opening, a storage node is formed as a spacer on the dielectric layer on the inner wall of the opening. The plate electrode polysilicon layer in the core/peripheral circuit region remains to provide the same height between the cell array region where the cell capacitor is formed and the core/peripheral circuit region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.