Selective epitaxial growth method in semiconductor device
US6391749B1 · kind B1 · utility
12Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2001 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Jun 15, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selective epitaxial growth performed by sequentially and repeatedly introducing a source gas, an etching gas, and a reducing gas in the reaction chamber, wherein controlled epitaxial layer doping may be obtained by introducing a dopant source gas during introducing any one of the source gas, an etching gas, and a reducing gas, and thereby producing a smooth and uniform epitaxial layer on a predetermined region of a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.