Inventor · Yongin-si, KR

Si-Young Choi

88Patents

16h-index

126Co-inventors

87Inventor score

Filing activity: Aug 5, 1997 → Nov 26, 2020

Most-cited inventions

Patent	Title	Area	Cited by	Status
US7074662B2	Methods for fabricating fin field effect transistors using a protective layer to reduce etching damage	Electricity	146	Expired
US7323710B2	Fin field effect transistors having multi-layer fin patterns	Electricity	63	Expired
US8916460B1	Semiconductor device and method for fabricating the same	Electricity	52	Active
US7148541B2	Vertical channel field effect transistors having insulating layers thereon	Electricity	37	Expired
US8039902B2	Semiconductor devices having Si and SiGe epitaxial layers	Electricity	32	Active
US7071048B2	Methods of fabricating fin field effect transistors having capping insulation layers	Electricity	28	Expired
US7320908B2	Methods of forming semiconductor devices having buried oxide patterns	Electricity	25	Expired
US6849520B2	Method and device for forming an STI type isolation in a semiconductor device	Electricity	24	Expired
US7842566B2	FinFET and method of manufacturing the same	Electricity	21	Active
US7535061B2	Fin-field effect transistors (Fin-FETs) having protection layers	Electricity	19	Active
US5863835A	Methods of forming electrical interconnects on semiconductor substrates	Electricity	19	Expired
US8012828B2	Recess gate transistor	Electricity	18	Active
US8803051B2	Microwave oven	Electricity	18	Active
US7176067B2	Methods of fabricating fin field effect transistors	Electricity	17	Expired
US7122871B2	Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations	Electricity	16	Expired
US8871104B2	Method of forming pattern, reticle, and computer readable medium for storing program for forming pattern	Emerging Cross-Sectional Technologies	16	Active
US6890823B2	Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrode	Electricity	14	Expired
US7683405B2	MOS transistors having recesses with elevated source/drain regions	Electricity	12	Active
US6391749B1	Selective epitaxial growth method in semiconductor device	Emerging Cross-Sectional Technologies	12	Expired
US7141456B2	Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers	Electricity	11	Expired
US8039350B2	Methods of fabricating MOS transistors having recesses with elevated source/drain regions	Electricity	10	Active
US8304318B2	Methods of fabricating MOS transistors having recesses with elevated source/drain regions	Electricity	10	Active
US8324043B2	Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layers	Electricity	10	Active
US7268396B2	Finfets having first and second gates of different resistivities	Electricity	9	Expired
US8906757B2	Methods of forming patterns of a semiconductor device	Electricity	9	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.