Etching process for organic anti-reflective coating
US6391786B1 · kind B1 · utility
4Cited by
24References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 1997 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Feb 16, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for selectively removing an anti-reflective coating (ARC) in the manufacturing of semiconductor integrated circuits using an oxygen-free plasma of one or more fluorine containing compounds, chlorine and an optional inert carrier gas. The process renders effective etching of the anti-reflective coating while maintaining dimensional control of a previously etched photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.