Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor
US6391804B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Jun 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.