Method of programming a flash memory cell
US6392929B1 · kind B1 · utility
8Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2000 |
| Grant date | May 21, 2002 |
| Priority date | — |
| Expiry date | Nov 27, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of programming a flash memory cell, which is performed applying a given voltage a gate and a drain and maintaining a source and a substrate at a ground potential. The method variably applies a given voltage, with two or more steps, to one of the gate and drain terminals while applying a given voltage to the other of the gate and drain terminals, thus reducing the programming current per cell. Accordingly, the present invention can improve reliability and throughput of the flash memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.