Ju Yeab Lee
18Patents
8h-index
12Co-inventors
65Inventor score
Filing activity: Nov 27, 2000 → Feb 25, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7782681B2 | Operation method of flash memory device capable of down-shifting a threshold voltage distribution of memory cells in a post-program verify operation | Physics | 25 | Active |
| US7046554B2 | Page buffer of flash memory device and data program method using the same | Physics | 21 | Expired |
| US7193897B2 | NAND flash memory device capable of changing a block size | Physics | 17 | Expired |
| US9424901B1 | Semiconductor memory device outputting status signal and operating method thereof | Physics | 17 | Active |
| US7623385B2 | Method of reading flash memory device for depressing read disturb | Physics | 13 | Active |
| US7796438B2 | Flash memory device and method of programming the same | Physics | 11 | Active |
| US7800946B2 | Flash memory device and operating method thereof | Physics | 10 | Active |
| US6392929B1 | Method of programming a flash memory cell | Physics | 8 | Expired |
| US7606080B2 | Erase verifying method of NAND flash memory device | Physics | 7 | Active |
| US7313024B2 | Non-volatile memory device having page buffer for verifying pre-erase | Physics | 6 | Expired |
| US7561474B2 | Program verifying method and programming method of flash memory device | Physics | 5 | Active |
| US8279675B2 | Nonvolatile memory device and method of programming the same | Physics | 5 | Active |
| US7864581B2 | Recovery method of NAND flash memory device | Physics | 4 | Expired |
| US8270221B2 | Nonvolatile memory device and method of operating the same | Electricity | 3 | Active |
| US6583465B1 | Code addressable memory cell in a flash memory device | Electricity | 2 | Expired |
| US6465302B1 | Method of manufacturing a flash memory device | Electricity | 2 | Expired |
| US8351267B2 | Method of programming nonvolatile memory device | Physics | 2 | Active |
| US6809973B2 | Flash memory device capable of repairing a word line | Physics | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.