Process apparatus and method for improved plasma processing of a substrate
US6395095B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Jun 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing system for processing a substrate comprises a process chamber having a top, a bottom, and a sidewall for defining a process space therein. The process chamber has an opening in the sidewall thereof for providing access to the process space. A plasma-generating assembly is coupled with the process chamber for creating a plasma within the process space. A substrate support assembly is configured for coupling with the process chamber to support a substrate within the process space. The substrate support assembly extends into the process space through the sidewall opening in the process chamber and seals the sidewall opening to generally isolate the process space from atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.