Photomask for projection lithography at or below about 160 nm and a method thereof
US6395433B1 · kind B1 · utility
17Cited by
7References
63Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 8, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Oct 8, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/46
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An attenuated phase shift mask for use in a lithography process includes a masking film made of at least one material with at least a silicon component which provides a transmission above about 0.5 percent and a phase shift of about a 180° for radiation at a wavelength at or below about 160 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.