Fully amorphized source/drain for leaky junctions
US6395587B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Feb 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a silicon-on-insulator (SOI) structure includes a field-effect transistor having amorphized source and drain regions formed by implanting silicon or germanium ions into a silicon layer formed over a buried insulator. The fully amorphized source and drain regions ultimately result in permanent crystalline defects that cause p-n junction leakage which allows charge in the body of the device to dissipate, thereby improving the overall efficiency and performance of the device. The source and drain regions are amorphized throughout their entire thickness to prevent single crystal re-crystallization from occurring during annealing and other subsequent processing steps that can degrade the quality of the p-n leakage junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.