Melanie J. Sherony
12Patents
6h-index
29Co-inventors
62Inventor score
Filing activity: Feb 11, 2000 → Mar 21, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6429482B1 | Halo-free non-rectifying contact on chip with halo source/drain diffusion | Electricity | 27 | Expired |
| US6395587B1 | Fully amorphized source/drain for leaky junctions | Electricity | 17 | Expired |
| US7893502B2 | Threshold voltage improvement employing fluorine implantation and adjustment oxide layer | Electricity | 8 | Active |
| US8445969B2 | High pressure deuterium treatment for semiconductor/high-K insulator interface | Electricity | 7 | Active |
| US7471548B2 | Structure of static random access memory with stress engineering for stability | Emerging Cross-Sectional Technologies | 7 | Active |
| US6750109B2 | Halo-free non-rectifying contact on chip with halo source/drain diffusion | Electricity | 7 | Expired |
| US7879666B2 | Semiconductor resistor formed in metal gate stack | Electricity | 4 | Active |
| US9059120B2 | In-situ relaxation for improved CMOS product lifetime | Physics | 0 | Active |
| US9064824B2 | In-situ annealing for extending the lifetime of CMOS products | Electricity | 0 | Active |
| US8106462B2 | Balancing NFET and PFET performance using straining layers | Electricity | 0 | Active |
| US9178495B2 | Establishing a thermal profile across a semiconductor chip | Electricity | 0 | Active |
| US8564074B2 | Self-limiting oxygen seal for high-K dielectric and design structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.