Simplified process for producing nanoporous silica
US6395651B1 · kind B1 · utility
21Cited by
0References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1998 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Jul 7, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.