Cleaning solution for semiconductor surfaces following chemical-mechanical polishing
US6395693B1 · kind B1 · utility
20Cited by
14References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 27, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Sep 27, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.