Imager with reduced FET photoresponse and high integrity contact via
US6396046B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Aug 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and being absorbed. Cross-talk and noise in the imager are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps comprising the same light block material may be included in the imager structure. The caps cover contact vias filled with a common electrode and located in the contact finger region of the imager. The integrity of the filled vias is thereby maintained during subsequent processing. Also disclosed is a radiation imager containing these structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.