Transient fuse for change-induced damage detection
US6396075B1 · kind B1 · utility
8Cited by
4References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 20, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | May 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transient fuse (102) and antenna (110) for detecting charge-induced plasma damage in a device (112). When the transient fuse (102) is placed between the antenna (110) and the device (112), only charge-induced damage during a metal clear portion of an etch occurs in device (112). When the transient fuse (102) is placed between ground and both the device (112) and the antenna (110), charge-induced damage occurring during an overetch portion of the etch can be detected in the device (112).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.