Semi-insulating silicon carbide without vanadium domination
US6396080B2 · kind B2 · utility
40Cited by
17References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2001 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | May 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.