Semiconductor package
US6396127B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2000 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Jan 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package includes a bottom leadframe having a bottom plate portion and at least one first terminal extending from the bottom plate portion; at least one second terminal being co-planar with the first terminal; a semiconductor power MOSFET die having a bottom surface defining a drain connection and a top surface on which a first metalized region defining a source and a second metalized region defining a gate are disposed, the bottom surface being coupled to the bottom plate of the leadframe such that the first terminal is electrically connected to the drain; a copper plate coupled to and spanning a substantial part of the first metalized region defining the source connection, the copper plate including at least one chamfered edge extending upward and away from the first metalized region; and at least one beam portion being sized and shaped to couple the copper plate portion to the at least one second terminal such that it is electrically coupled to the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.