Semiconductor device and method for manufacturing the same technical field
US6396145B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | May 28, 2002 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor element arranged to form integrated circuitry, a plurality of electrode pads formed on the side of the integrated circuitry formation surface of the in semiconductor element, bump electrodes for external connection electrically connected to the electrode pads through a conductive layer, and a stress relaxation layer formed between the integrated circuitry formation surface and electrode pads on one hand and the bump electrodes and conductive layer on the other hand, the stress relaxation layer being adhered thereto, wherein more than one third of the stress relaxation layer from a surface thereof is cut away for removal and wherein the stress relaxation layer is subdivided into a plurality of regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.