Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films
US6399208B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1999 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Oct 7, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09D1/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A precursor composition for forming a zirconium and/or hafnium silicate film on a substrate, e.g., by chemical vapor deposition (CVD). Illustrative precursor compositions include (1) a first precursor metal compound or complex including a silicon alcoxide (siloxide) ligand coordinated to a metal M, wherein M=Zr or Hf and (2) a second precursor metal compound or complex including an aliphatic alcoxide ligand coordinated to a metal M, wherein M=Zr or Hf, wherein the relative proportions of the first and second precursors relative to one another are employed to controllably establish the M/Si ratio in the deposited silicate thin film. The precursor composition may contain a solvent medium, so that the composition is adapted for liquid delivery CVD, to form stable thin-film gate dielectrics for fabrication of microelectronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.